FCP190N60
Manufacturer:
On Semiconductor
Mfr.Part #:
FCP190N60
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 208 W 650 V Continuous Drain Current (ID):20.2 A 74 nC
| Parameter | Value |
|---|---|
| Length | 10.67 mm |
| Width | 4.83 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 16.51 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 208 W |
| Power Dissipation | 208 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Input capacitance | 2.95 nF |
| Continuous Drain Current (ID) | 20.2 A |
| Rds On Max | 199 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 64 ns |
| Element Configuration | Single |
| Fall Time | 5 ns |
| Rise Time | 10 ns |
| Gate Charge | 74 nC |
| Drain to Source Resistance | 199 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2.5 V |
| FET Type(Transistor Polarity) | N-Channel |
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